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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/VieyVJGTPGGMIMM19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Torres>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Aby-Ga%E2%88%9A%C4%99l_Viey>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ferdinando_Iucolano>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fred_Gaillard>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Marc_Plissonnier>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Marie-Anne_Jaud>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Roberto_Modica>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Romain_Gwoziecki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/William_Vandendaele>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2019.8720554>
foaf:homepage <https://doi.org/10.1109/IRPS.2019.8720554>
dc:identifier DBLP conf/irps/VieyVJGTPGGMIMM19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2019.8720554 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Torres>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Aby-Ga%E2%88%9A%C4%99l_Viey>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ferdinando_Iucolano>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fred_Gaillard>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Marc_Plissonnier>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Marie-Anne_Jaud>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Roberto_Modica>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Romain_Gwoziecki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/William_Vandendaele>
swrc:pages 1-6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2019>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/VieyVJGTPGGMIMM19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/VieyVJGTPGGMIMM19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2019.html#VieyVJGTPGGMIMM19>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2019.8720554>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document