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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/WangLRZJLWH22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Da_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junhua_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Longda_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pengpeng_Ren>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ru_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Runsheng_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yong_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhigang_Ji>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48227.2022.9764561>
foaf:homepage <https://doi.org/10.1109/IRPS48227.2022.9764561>
dc:identifier DBLP conf/irps/WangLRZJLWH22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48227.2022.9764561 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Da_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junhua_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Longda_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pengpeng_Ren>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ru_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Runsheng_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yong_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhigang_Ji>
swrc:pages 7 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2022.html#WangLRZJLWH22>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48227.2022.9764561>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document