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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/WooKPSKCSN20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Changbeom_Woo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gil-Bok_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haesoo_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hyungcheol_Shin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jaeyeol_Park>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Keum_Hwan_Noh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Moon-Sik_Seo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shinkeun_Kim>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS45951.2020.9129306>
foaf:homepage <https://doi.org/10.1109/IRPS45951.2020.9129306>
dc:identifier DBLP conf/irps/WooKPSKCSN20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS45951.2020.9129306 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
rdfs:label Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Changbeom_Woo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gil-Bok_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haesoo_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hyungcheol_Shin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jaeyeol_Park>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Keum_Hwan_Noh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Moon-Sik_Seo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shinkeun_Kim>
swrc:pages 1-6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2020>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/WooKPSKCSN20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/WooKPSKCSN20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2020.html#WooKPSKCSN20>
rdfs:seeAlso <https://doi.org/10.1109/IRPS45951.2020.9129306>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document