Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs.
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/irps/ZhuLWASS21
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Anant_K._Agarwal
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Arash_Salemi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/David_Sheridan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Marvin_H._White
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shengnan_Zhu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Tianshi_Liu
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FIRPS46558.2021.9405230
>
foaf:
homepage
<
https://doi.org/10.1109/IRPS46558.2021.9405230
>
dc:
identifier
DBLP conf/irps/ZhuLWASS21
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FIRPS46558.2021.9405230
(xsd:string)
dcterms:
issued
2021
(xsd:gYear)
rdfs:
label
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Anant_K._Agarwal
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Arash_Salemi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/David_Sheridan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Marvin_H._White
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shengnan_Zhu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Tianshi_Liu
>
swrc:
pages
1-7
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/irps/2021
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/irps/ZhuLWASS21/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/irps/ZhuLWASS21
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/irps/irps2021.html#ZhuLWASS21
>
rdfs:
seeAlso
<
https://doi.org/10.1109/IRPS46558.2021.9405230
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/irps
>
dc:
title
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document