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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/ZhuSJQBMWALSC23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Anant_K._Agarwal>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Atsushi_Shimbori>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chingchi_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hema_Lata_Rao_Maddi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiashu_Qian>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Limeng_Shi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Marvin_H._White>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michael_Jin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Monikuntala_Bhattacharya>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shengnan_Zhu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tianshi_Liu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117998>
foaf:homepage <https://doi.org/10.1109/IRPS48203.2023.10117998>
dc:identifier DBLP conf/irps/ZhuSJQBMWALSC23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48203.2023.10117998 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Anant_K._Agarwal>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Atsushi_Shimbori>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chingchi_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hema_Lata_Rao_Maddi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiashu_Qian>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Limeng_Shi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Marvin_H._White>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michael_Jin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Monikuntala_Bhattacharya>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shengnan_Zhu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tianshi_Liu>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/ZhuSJQBMWALSC23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/ZhuSJQBMWALSC23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2023.html#ZhuSJQBMWALSC23>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48203.2023.10117998>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document