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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/iscas/BouchakourHCBM01>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jean_Michel_Mirable>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nadia_Harabech>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Philippe_Boivin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pierre_Canet>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rachid_Bouchakour>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISCAS.2001.922364>
foaf:homepage <https://doi.org/10.1109/ISCAS.2001.922364>
dc:identifier DBLP conf/iscas/BouchakourHCBM01 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISCAS.2001.922364 (xsd:string)
dcterms:issued 2001 (xsd:gYear)
rdfs:label Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jean_Michel_Mirable>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nadia_Harabech>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Philippe_Boivin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pierre_Canet>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rachid_Bouchakour>
swrc:pages 822-825 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/iscas/2001>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/iscas/BouchakourHCBM01/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/iscas/BouchakourHCBM01>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/iscas/iscas2001-4.html#BouchakourHCBM01>
rdfs:seeAlso <https://doi.org/10.1109/ISCAS.2001.922364>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/iscas>
dc:title Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document