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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/iscas/ChakrabortyDSSMMP06>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alberto_Macii>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ashoka_Visweswara_Sathanur>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ashutosh_Chakraborty>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Enrico_Macii>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Karthik_Duraisami>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Massimo_Poncino>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Prassanna_Sithambaram>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISCAS.2006.1692515>
foaf:homepage <https://doi.org/10.1109/ISCAS.2006.1692515>
dc:identifier DBLP conf/iscas/ChakrabortyDSSMMP06 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISCAS.2006.1692515 (xsd:string)
dcterms:issued 2006 (xsd:gYear)
rdfs:label Implications of ultra low-voltage devices on design techniques for controlling leakage in NanoCMOS circuits. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alberto_Macii>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ashoka_Visweswara_Sathanur>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ashutosh_Chakraborty>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Enrico_Macii>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Karthik_Duraisami>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Massimo_Poncino>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Prassanna_Sithambaram>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/iscas/iscas2006.html#ChakrabortyDSSMMP06>
rdfs:seeAlso <https://doi.org/10.1109/ISCAS.2006.1692515>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/iscas>
dc:title Implications of ultra low-voltage devices on design techniques for controlling leakage in NanoCMOS circuits. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document