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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/iscas/DeySASPA23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Abhishek_Pullela>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Arnab_Dey>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ashfakh_Ali>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bharadwaj_Subramaniam>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bhartipudi_Sahishnavi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zia_Abbas>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISCAS46773.2023.10182117>
foaf:homepage <https://doi.org/10.1109/ISCAS46773.2023.10182117>
dc:identifier DBLP conf/iscas/DeySASPA23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISCAS46773.2023.10182117 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40¬įC to 150¬įC for Low-Power IoT Systems. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Abhishek_Pullela>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Arnab_Dey>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ashfakh_Ali>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bharadwaj_Subramaniam>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bhartipudi_Sahishnavi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zia_Abbas>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/iscas/2023>
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/iscas/DeySASPA23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/iscas/iscas2023.html#DeySASPA23>
rdfs:seeAlso <https://doi.org/10.1109/ISCAS46773.2023.10182117>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/iscas>
dc:title A 2.3nW Gate-Leakage Based Sub-Bandgap Voltage Reference with Line Sensitivity of 0.0066%/V from -40¬įC to 150¬įC for Low-Power IoT Systems. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document