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dc:creator <https://dblp.l3s.de/d2r/resource/authors/G._Purnachandra_Rao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hieu_Pham_Trung_Nguyen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Trupti_Ranjan_Lenka>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISCAS46773.2023.10181917>
foaf:homepage <https://doi.org/10.1109/ISCAS46773.2023.10181917>
dc:identifier DBLP conf/iscas/RaoLN23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISCAS46773.2023.10181917 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. (xsd:string)
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Trupti_Ranjan_Lenka>
swrc:pages 1-4 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/iscas/iscas2023.html#RaoLN23>
rdfs:seeAlso <https://doi.org/10.1109/ISCAS46773.2023.10181917>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/iscas>
dc:title Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document