Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics.
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Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics.
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Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics.
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