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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/ised/SomayajiB16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/B._Jhnanesh_Somayaji>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._S._Bhat_0001>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISED.2016.7977057>
foaf:homepage <https://doi.org/10.1109/ISED.2016.7977057>
dc:identifier DBLP conf/ised/SomayajiB16 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISED.2016.7977057 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
rdfs:label Analysis of implant parameters in high voltage TRIPLE RESURF LDMOS for advanced SoC applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/B._Jhnanesh_Somayaji>
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swrc:pages 72-76 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ISED.2016.7977057>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/ised>
dc:title Analysis of implant parameters in high voltage TRIPLE RESURF LDMOS for advanced SoC applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document