Analysis of implant parameters in high voltage TRIPLE RESURF LDMOS for advanced SoC applications.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/ised/SomayajiB16
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/ised/SomayajiB16
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/B._Jhnanesh_Somayaji
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/M._S._Bhat_0001
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FISED.2016.7977057
>
foaf:
homepage
<
https://doi.org/10.1109/ISED.2016.7977057
>
dc:
identifier
DBLP conf/ised/SomayajiB16
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FISED.2016.7977057
(xsd:string)
dcterms:
issued
2016
(xsd:gYear)
rdfs:
label
Analysis of implant parameters in high voltage TRIPLE RESURF LDMOS for advanced SoC applications.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/B._Jhnanesh_Somayaji
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/M._S._Bhat_0001
>
swrc:
pages
72-76
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/ised/2016
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/ised/SomayajiB16/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/ised/SomayajiB16
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/ised/ised2016.html#SomayajiB16
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ISED.2016.7977057
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/ised
>
dc:
title
Analysis of implant parameters in high voltage TRIPLE RESURF LDMOS for advanced SoC applications.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document