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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/ises/AhmedS17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Prabir_Saha>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rekib_Uddin_Ahmed>
foaf:homepage <http://dx.doi.org/doi.ieeecomputersociety.org%2F10.1109%2FiNIS.2017.44>
foaf:homepage <https://doi.ieeecomputersociety.org/10.1109/iNIS.2017.44>
dc:identifier DBLP conf/ises/AhmedS17 (xsd:string)
dc:identifier DOI doi.ieeecomputersociety.org%2F10.1109%2FiNIS.2017.44 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
rdfs:label Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Prabir_Saha>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rekib_Uddin_Ahmed>
swrc:pages 179-183 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/ises/2017>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/ises/AhmedS17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/ises/AhmedS17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/ises/inis2017.html#AhmedS17>
rdfs:seeAlso <https://doi.ieeecomputersociety.org/10.1109/iNIS.2017.44>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/ises>
dc:title Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document