Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/ises/SoniSYAYS17
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/ises/SoniSYAYS17
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Deepak_Soni
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dharmendra_Singh_Yadav
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dheeraj_Sharma
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mohd._Aslam
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Neeraj_Sharma
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shivendra_Yadav
>
foaf:
homepage
<
http://dx.doi.org/doi.ieeecomputersociety.org%2F10.1109%2FiNIS.2017.47
>
foaf:
homepage
<
https://doi.ieeecomputersociety.org/10.1109/iNIS.2017.47
>
dc:
identifier
DBLP conf/ises/SoniSYAYS17
(xsd:string)
dc:
identifier
DOI doi.ieeecomputersociety.org%2F10.1109%2FiNIS.2017.47
(xsd:string)
dcterms:
issued
2017
(xsd:gYear)
rdfs:
label
Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Deepak_Soni
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dharmendra_Singh_Yadav
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dheeraj_Sharma
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mohd._Aslam
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Neeraj_Sharma
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shivendra_Yadav
>
swrc:
pages
190-194
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/ises/2017
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/ises/SoniSYAYS17/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/ises/SoniSYAYS17
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/ises/inis2017.html#SoniSYAYS17
>
rdfs:
seeAlso
<
https://doi.ieeecomputersociety.org/10.1109/iNIS.2017.47
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/ises
>
dc:
title
Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document