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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/islped/BolKFL09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_Bol>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Denis_Flandre>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dina_Kamel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jean-Didier_Legat>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F1594233.1594237>
foaf:homepage <https://doi.org/10.1145/1594233.1594237>
dc:identifier DBLP conf/islped/BolKFL09 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F1594233.1594237 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
rdfs:label Nanometer MOSFET effects on the minimum-energy point of 45nm subthreshold logic. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_Bol>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Denis_Flandre>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dina_Kamel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jean-Didier_Legat>
swrc:pages 3-8 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/islped/2009>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/islped/BolKFL09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/islped/BolKFL09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/islped/islped2009.html#BolKFL09>
rdfs:seeAlso <https://doi.org/10.1145/1594233.1594237>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/islped>
dc:subject cmos digital integrated circuits, gate leakage, short-channel effects, subthreshold logic, ultra-low power, variability (xsd:string)
dc:title Nanometer MOSFET effects on the minimum-energy point of 45nm subthreshold logic. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document