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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/ismvl/DegawaAHINT06>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hiroshi_Inokawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Katsuhiko_Degawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Katsuhiko_Nishiguchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takafumi_Aoki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tatsuo_Higuchi_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yasuo_Takahashi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISMVL.2006.6>
foaf:homepage <https://doi.org/10.1109/ISMVL.2006.6>
dc:identifier DBLP conf/ismvl/DegawaAHINT06 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISMVL.2006.6 (xsd:string)
dcterms:issued 2006 (xsd:gYear)
rdfs:label A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hiroshi_Inokawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Katsuhiko_Degawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Katsuhiko_Nishiguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takafumi_Aoki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tatsuo_Higuchi_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yasuo_Takahashi>
swrc:pages 19 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/ismvl/2006>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/ismvl/DegawaAHINT06/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/ismvl/DegawaAHINT06>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/ismvl/ismvl2006.html#DegawaAHINT06>
rdfs:seeAlso <https://doi.org/10.1109/ISMVL.2006.6>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/ismvl>
dc:title A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document