An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

Property	Value
dcterms:bibliographicCitation	<http://dblp.uni-trier.de/rec/bibtex/conf/isqed/ElghazaliSO18>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Ajoy_Opal>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Mahdi_Elghazali>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Manoj_Sachdev>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1109%2FISQED.2018.8357290>
foaf:homepage	<https://doi.org/10.1109/ISQED.2018.8357290>
dc:identifier	DBLP conf/isqed/ElghazaliSO18 (xsd:string)
dc:identifier	DOI doi.org%2F10.1109%2FISQED.2018.8357290 (xsd:string)
dcterms:issued	2018 (xsd:gYear)
rdfs:label	An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Ajoy_Opal>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Mahdi_Elghazali>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Manoj_Sachdev>
swrc:pages	214-220 (xsd:string)
dcterms:partOf	<https://dblp.l3s.de/d2r/resource/publications/conf/isqed/2018>
owl:sameAs	<http://bibsonomy.org/uri/bibtexkey/conf/isqed/ElghazaliSO18/dblp>
owl:sameAs	<http://dblp.rkbexplorer.com/id/conf/isqed/ElghazaliSO18>
rdfs:seeAlso	<http://dblp.uni-trier.de/db/conf/isqed/isqed2018.html#ElghazaliSO18>
rdfs:seeAlso	<https://doi.org/10.1109/ISQED.2018.8357290>
swrc:series	<https://dblp.l3s.de/d2r/resource/conferences/isqed>
dc:title	An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. (xsd:string)
dc:type	<http://purl.org/dc/dcmitype/Text>
rdf:type	swrc:InProceedings
rdf:type	foaf:Document