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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isqed/ElghazaliSO18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ajoy_Opal>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mahdi_Elghazali>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Manoj_Sachdev>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISQED.2018.8357290>
foaf:homepage <https://doi.org/10.1109/ISQED.2018.8357290>
dc:identifier DBLP conf/isqed/ElghazaliSO18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISQED.2018.8357290 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ajoy_Opal>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mahdi_Elghazali>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Manoj_Sachdev>
swrc:pages 214-220 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isqed/2018>
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isqed/ElghazaliSO18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isqed/isqed2018.html#ElghazaliSO18>
rdfs:seeAlso <https://doi.org/10.1109/ISQED.2018.8357290>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isqed>
dc:title An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document