[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isqed/LiLYMCCZO01>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._S._Oates>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._S._Yuan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Joshua_McConkey>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qiang_Li_0039>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sundar_Chetlur>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuan_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISQED.2001.915244>
foaf:homepage <https://doi.org/10.1109/ISQED.2001.915244>
dc:identifier DBLP conf/isqed/LiLYMCCZO01 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISQED.2001.915244 (xsd:string)
dcterms:issued 2001 (xsd:gYear)
rdfs:label Hot-carrier-Induced Circuit Degradation for 0.18 ¬Ķm CMOS Technology. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._S._Oates>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._S._Yuan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Joshua_McConkey>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qiang_Li_0039>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sundar_Chetlur>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuan_Chen>
swrc:pages 284-289 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isqed/2001>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/isqed/LiLYMCCZO01/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isqed/LiLYMCCZO01>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isqed/isqed2001.html#LiLYMCCZO01>
rdfs:seeAlso <https://doi.org/10.1109/ISQED.2001.915244>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isqed>
dc:title Hot-carrier-Induced Circuit Degradation for 0.18 ¬Ķm CMOS Technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document