Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

Property	Value
dcterms:bibliographicCitation	<http://dblp.uni-trier.de/rec/bibtex/conf/isqed/LiuHFHBSZC08>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Feng_Liu>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jin_He_0003>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jinhua_Hu>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Mansun_Chan>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Wei_Bian>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Xing_Zhang_0002>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yan_Song>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yue_Fu>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1109%2FISQED.2008.4479738>
foaf:homepage	<https://doi.org/10.1109/ISQED.2008.4479738>
dc:identifier	DBLP conf/isqed/LiuHFHBSZC08 (xsd:string)
dc:identifier	DOI doi.org%2F10.1109%2FISQED.2008.4479738 (xsd:string)
dcterms:issued	2008 (xsd:gYear)
rdfs:label	Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Feng_Liu>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Jin_He_0003>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Jinhua_Hu>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Mansun_Chan>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Wei_Bian>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Xing_Zhang_0002>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yan_Song>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Yue_Fu>
swrc:pages	271-276 (xsd:string)
dcterms:partOf	<https://dblp.l3s.de/d2r/resource/publications/conf/isqed/2008>
owl:sameAs	<http://bibsonomy.org/uri/bibtexkey/conf/isqed/LiuHFHBSZC08/dblp>
owl:sameAs	<http://dblp.rkbexplorer.com/id/conf/isqed/LiuHFHBSZC08>
rdfs:seeAlso	<http://dblp.uni-trier.de/db/conf/isqed/isqed2008.html#LiuHFHBSZC08>
rdfs:seeAlso	<https://doi.org/10.1109/ISQED.2008.4479738>
swrc:series	<https://dblp.l3s.de/d2r/resource/conferences/isqed>
dc:subject	double-gate MOSFET, compact model, drain current (xsd:string)
dc:title	Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes. (xsd:string)
dc:type	<http://purl.org/dc/dcmitype/Text>
rdf:type	swrc:InProceedings
rdf:type	foaf:Document