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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isqed/LiuTK08>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sherif_A._Tawfik>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Volkan_Kursun>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhiyu_Liu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISQED.2008.4479745>
foaf:homepage <https://doi.org/10.1109/ISQED.2008.4479745>
dc:identifier DBLP conf/isqed/LiuTK08 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISQED.2008.4479745 (xsd:string)
dcterms:issued 2008 (xsd:gYear)
rdfs:label Statistical Data Stability and Leakage Evaluation of FinFET SRAM Cells with Dynamic Threshold Voltage Tuning under Process Parameter Fluctuations. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sherif_A._Tawfik>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Volkan_Kursun>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhiyu_Liu>
swrc:pages 305-310 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isqed/2008>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/isqed/LiuTK08/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isqed/LiuTK08>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isqed/isqed2008.html#LiuTK08>
rdfs:seeAlso <https://doi.org/10.1109/ISQED.2008.4479745>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isqed>
dc:subject Cache memory, static noise margin distribution, robust operation, active power, standby power distribution, double gate MOSFET, process variations (xsd:string)
dc:title Statistical Data Stability and Leakage Evaluation of FinFET SRAM Cells with Dynamic Threshold Voltage Tuning under Process Parameter Fluctuations. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document