A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Bo_Li>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Chenyue_Ma>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Jin_He_0003>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Lining_Zhang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Mansun_Chan>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Xing_Zhang_0002>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Xinnan_Lin>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1109%2FISQED.2009.4810262>
foaf:homepage	<https://doi.org/10.1109/ISQED.2009.4810262>
dc:identifier	DBLP conf/isqed/MaLZHZLC09 (xsd:string)
dc:identifier	DOI doi.org%2F10.1109%2FISQED.2009.4810262 (xsd:string)
dcterms:issued	2009 (xsd:gYear)
rdfs:label	A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Bo_Li>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Chenyue_Ma>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Jin_He_0003>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Lining_Zhang>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Mansun_Chan>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Xing_Zhang_0002>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Xinnan_Lin>
swrc:pages	7-12 (xsd:string)
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dc:title	A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. (xsd:string)
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