[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isqed/OhYD02>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Robert_W._Dutton>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tae-young_Oh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhiping_Yu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISQED.2002.996767>
foaf:homepage <https://doi.org/10.1109/ISQED.2002.996767>
dc:identifier DBLP conf/isqed/OhYD02 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISQED.2002.996767 (xsd:string)
dcterms:issued 2002 (xsd:gYear)
rdfs:label AC Analysis of Thin Gate Oxide MOS with Quantum Mechanical Corrections. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Robert_W._Dutton>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tae-young_Oh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhiping_Yu>
swrc:pages 326-330 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isqed/2002>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/isqed/OhYD02/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isqed/OhYD02>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isqed/isqed2002.html#OhYD02>
rdfs:seeAlso <https://doi.org/10.1109/ISQED.2002.996767>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isqed>
dc:subject AC analysis, thin gate oxide, quantum mechanical correction, threshold voltage shift, capacitance, transconductace, channel length reduction, density-gradient, quantum confinement, PROPHET, channel doping, transport theory, device parameter extraction, effective oxide thickness (xsd:string)
dc:title AC Analysis of Thin Gate Oxide MOS with Quantum Mechanical Corrections. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document