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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isscc/ChangCCCLLCNLWLWCCC13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chung-Cheng_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/George_H._Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hank_Cheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kuan-Lun_Cheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Min_Cao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ping-Wei_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Quincy_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Robin_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shyue-Shyh_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sreedhar_Natarajan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Stanley_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISSCC.2013.6487750>
foaf:homepage <https://doi.org/10.1109/ISSCC.2013.6487750>
dc:identifier DBLP conf/isscc/ChangCCCLLCNLWLWCCC13 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISSCC.2013.6487750 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
rdfs:label A 20nm 112Mb SRAM in High-–ļ metal-gate with assist circuitry for low-leakage and low-VMIN applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chung-Cheng_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/George_H._Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hank_Cheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kuan-Lun_Cheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Min_Cao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ping-Wei_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Quincy_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Robin_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shyue-Shyh_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sreedhar_Natarajan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Stanley_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen>
swrc:pages 316-317 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isscc/2013>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/isscc/ChangCCCLLCNLWLWCCC13/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isscc/ChangCCCLLCNLWLWCCC13>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isscc/isscc2013.html#ChangCCCLLCNLWLWCCC13>
rdfs:seeAlso <https://doi.org/10.1109/ISSCC.2013.6487750>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isscc>
dc:title A 20nm 112Mb SRAM in High-–ļ metal-gate with assist circuitry for low-leakage and low-VMIN applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document