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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isscc/ChangCCSCFLLHLL17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chih-Yung_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hank_Cheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hidehiro_Fujiwara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jhon-Jhy_Liaw>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jih-Yu_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/John_Hung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kao-Cheng_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mu-Chi_Chiang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Quincy_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Robin_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sahil_Preet_Singh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shien-Yang_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISSCC.2017.7870333>
foaf:homepage <https://doi.org/10.1109/ISSCC.2017.7870333>
dc:identifier DBLP conf/isscc/ChangCCSCFLLHLL17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISSCC.2017.7870333 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
rdfs:label 12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chih-Yung_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hank_Cheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hidehiro_Fujiwara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jhon-Jhy_Liaw>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jih-Yu_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/John_Hung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kao-Cheng_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mu-Chi_Chiang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Quincy_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Robin_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sahil_Preet_Singh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shien-Yang_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen>
swrc:pages 206-207 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isscc/2017>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/isscc/ChangCCSCFLLHLL17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isscc/ChangCCSCFLLHLL17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isscc/isscc2017.html#ChangCCSCFLLHLL17>
rdfs:seeAlso <https://doi.org/10.1109/ISSCC.2017.7870333>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isscc>
dc:title 12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document