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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isscc/ChenCWLPLCLCLCW14>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chih-Yung_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/George_H._Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jhon-Jhy_Liaw>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kuo-Hua_Pan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mu-Chi_Chiang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Quincy_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shien-Yang_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sreedhar_Natarajan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tang-Hsuan_Chung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei-Cheng_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISSCC.2014.6757416>
foaf:homepage <https://doi.org/10.1109/ISSCC.2014.6757416>
dc:identifier DBLP conf/isscc/ChenCWLPLCLCLCW14 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISSCC.2014.6757416 (xsd:string)
dcterms:issued 2014 (xsd:gYear)
rdfs:label 13.5 A 16nm 128Mb SRAM in high-őļ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chih-Yung_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/George_H._Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jhon-Jhy_Liaw>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jonathan_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kuo-Hua_Pan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mu-Chi_Chiang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Quincy_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shien-Yang_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sreedhar_Natarajan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tang-Hsuan_Chung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei-Cheng_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei-Min_Chan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yen-Huei_Chen>
swrc:pages 238-239 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isscc/2014>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/isscc/ChenCWLPLCLCLCW14/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isscc/ChenCWLPLCLCLCW14>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isscc/isscc2014.html#ChenCWLPLCLCLCW14>
rdfs:seeAlso <https://doi.org/10.1109/ISSCC.2014.6757416>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isscc>
dc:title 13.5 A 16nm 128Mb SRAM in high-őļ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document