13.5 A 16nm 128Mb SRAM in high-őļ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
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13.5 A 16nm 128Mb SRAM in high-őļ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
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13.5 A 16nm 128Mb SRAM in high-őļ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
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