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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isscc/ChenHCCH18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chao-Chang_Chiu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chih-Wei_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kuo-Chun_Hsu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tzu-Chi_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei-Chung_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISSCC.2018.8310371>
foaf:homepage <https://doi.org/10.1109/ISSCC.2018.8310371>
dc:identifier DBLP conf/isscc/ChenHCCH18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISSCC.2018.8310371 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label 94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chao-Chang_Chiu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chih-Wei_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kuo-Chun_Hsu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tzu-Chi_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei-Chung_Chen>
swrc:pages 436-438 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isscc/2018>
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isscc/ChenHCCH18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isscc/isscc2018.html#ChenHCCH18>
rdfs:seeAlso <https://doi.org/10.1109/ISSCC.2018.8310371>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isscc>
dc:title 94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document