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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isscc/KulkarniTANATD15>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carlos_Tokunaga>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Charles_Augustine>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/James_W._Tschanz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jaydeep_P._Kulkarni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Paolo_A._Aseron>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Trang_Nguyen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Vivek_De>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISSCC.2015.7062936>
foaf:homepage <https://doi.org/10.1109/ISSCC.2015.7062936>
dc:identifier DBLP conf/isscc/KulkarniTANATD15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISSCC.2015.7062936 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label 4.7 A 409GOPS/W adaptive and resilient domino register file in 22nm tri-gate CMOS featuring in-situ timing margin and error detection for tolerance to within-die variation, voltage droop, temperature and aging. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carlos_Tokunaga>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Charles_Augustine>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/James_W._Tschanz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jaydeep_P._Kulkarni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Paolo_A._Aseron>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Trang_Nguyen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Vivek_De>
swrc:pages 1-3 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/isscc/2015>
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/isscc/KulkarniTANATD15>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#KulkarniTANATD15>
rdfs:seeAlso <https://doi.org/10.1109/ISSCC.2015.7062936>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isscc>
dc:title 4.7 A 409GOPS/W adaptive and resilient domino register file in 22nm tri-gate CMOS featuring in-situ timing margin and error detection for tolerance to within-die variation, voltage droop, temperature and aging. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document