15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/isscc/YeoCKJOKBPYJ24
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Giseok_Kim
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jisang_Oh
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Keonhee_Cho
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kyeongrim_Baek
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Minjune_Yeo
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sekeon_Kim
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Seong-Ook_Jung
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Seung_Jae_Yei
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sungho_Park
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Won_Joon_Jo
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FISSCC49657.2024.10454360
>
foaf:
homepage
<
https://doi.org/10.1109/ISSCC49657.2024.10454360
>
dc:
identifier
DBLP conf/isscc/YeoCKJOKBPYJ24
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FISSCC49657.2024.10454360
(xsd:string)
dcterms:
issued
2024
(xsd:gYear)
rdfs:
label
15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Giseok_Kim
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jisang_Oh
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Keonhee_Cho
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kyeongrim_Baek
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Minjune_Yeo
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sekeon_Kim
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Seong-Ook_Jung
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Seung_Jae_Yei
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sungho_Park
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Won_Joon_Jo
>
swrc:
pages
282-284
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/isscc/2024
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/isscc/YeoCKJOKBPYJ24/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/isscc/YeoCKJOKBPYJ24
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#YeoCKJOKBPYJ24
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ISSCC49657.2024.10454360
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/isscc
>
dc:
title
15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document