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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/isvlsi/BrocardMCSFLCBB17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Beno%E2%88%9A%C4%A3t_Mathieu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cao-Minh_Vincent_Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Claire_Fenouillet-B%E2%88%9A%C2%A9ranger>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cristiano_Santos>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Olivier_Billoint>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Perrine_Batude>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S%E2%88%9A%C2%A9bastien_Thuries>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FISVLSI.2017.100>
foaf:homepage <https://doi.org/10.1109/ISVLSI.2017.100>
dc:identifier DBLP conf/isvlsi/BrocardMCSFLCBB17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FISVLSI.2017.100 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
rdfs:label Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Beno%E2%88%9A%C4%A3t_Mathieu>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S%E2%88%9A%C2%A9bastien_Thuries>
swrc:pages 539-544 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ISVLSI.2017.100>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/isvlsi>
dc:title Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document