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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/itw/WeiLKSL18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Feng_Shu_0002>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jun_Li_0004>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kang_Wei>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lingjun_Kong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yonghui_Li_0001>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FITW.2018.8613523>
foaf:homepage <https://doi.org/10.1109/ITW.2018.8613523>
dc:identifier DBLP conf/itw/WeiLKSL18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FITW.2018.8613523 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label Read-Voltage Optimization for Finite Code Length in MLC NAND Flash Memory. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Feng_Shu_0002>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jun_Li_0004>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kang_Wei>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lingjun_Kong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yonghui_Li_0001>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/itw/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/itw/WeiLKSL18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/itw/WeiLKSL18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/itw/itw2018.html#WeiLKSL18>
rdfs:seeAlso <https://doi.org/10.1109/ITW.2018.8613523>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/itw>
dc:title Read-Voltage Optimization for Finite Code Length in MLC NAND Flash Memory. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document