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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/mipro/SigleWOFSBS21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Daniel_Schwarz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_Wei%E2%88%9A%C3%BChaupt>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/E._Sigle>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fritz_Berkmann>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hannes_S._Funk>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%E2%88%82rg_Schulze>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michael_Oehme>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FMIPRO52101.2021.9597145>
foaf:homepage <https://doi.org/10.23919/MIPRO52101.2021.9597145>
dc:identifier DBLP conf/mipro/SigleWOFSBS21 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FMIPRO52101.2021.9597145 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Daniel_Schwarz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_Wei%E2%88%9A%C3%BChaupt>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._Sigle>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fritz_Berkmann>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hannes_S._Funk>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%E2%88%82rg_Schulze>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michael_Oehme>
swrc:pages 40-44 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/mipro/2021>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/mipro/SigleWOFSBS21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/mipro/SigleWOFSBS21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/mipro/mipro2021.html#SigleWOFSBS21>
rdfs:seeAlso <https://doi.org/10.23919/MIPRO52101.2021.9597145>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/mipro>
dc:title Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document