SPAD Mixed-Quenching Circuit in 0.35-¬Ķm CMOS for Achieving a PDP of 39.2% at 854 nm.
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SPAD Mixed-Quenching Circuit in 0.35-¬Ķm CMOS for Achieving a PDP of 39.2% at 854 nm.
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SPAD Mixed-Quenching Circuit in 0.35-¬Ķm CMOS for Achieving a PDP of 39.2% at 854 nm.
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