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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/patmos/AmatCCR17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Calomarde>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Rubio_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Esteve_Amat>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ramon_Canal>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FPATMOS.2017.8106951>
foaf:homepage <https://doi.org/10.1109/PATMOS.2017.8106951>
dc:identifier DBLP conf/patmos/AmatCCR17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FPATMOS.2017.8106951 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
rdfs:label Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Calomarde>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Rubio_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Esteve_Amat>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ramon_Canal>
swrc:pages 1-6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/patmos/2017>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/patmos/AmatCCR17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/patmos/AmatCCR17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/patmos/patmos2017.html#AmatCCR17>
rdfs:seeAlso <https://doi.org/10.1109/PATMOS.2017.8106951>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/patmos>
dc:title Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document