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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/patmos/NoltsisMRCS17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dimitrios_Rodopoulos>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dimitrios_Soudris>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Eleni_Maragkoudaki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Francky_Catthoor>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michail_Noltsis>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FPATMOS.2017.8106967>
foaf:homepage <https://doi.org/10.1109/PATMOS.2017.8106967>
dc:identifier DBLP conf/patmos/NoltsisMRCS17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FPATMOS.2017.8106967 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
rdfs:label Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dimitrios_Rodopoulos>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dimitrios_Soudris>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Eleni_Maragkoudaki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Francky_Catthoor>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michail_Noltsis>
swrc:pages 1-8 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/patmos/2017>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/patmos/NoltsisMRCS17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/patmos/NoltsisMRCS17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/patmos/patmos2017.html#NoltsisMRCS17>
rdfs:seeAlso <https://doi.org/10.1109/PATMOS.2017.8106967>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/patmos>
dc:title Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document