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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/prime/RinaldiLBRE23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gian_Domenico_Licciardo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Luigi_Di_Benedetto>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mathias_Rommel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nicola_J._Rinaldi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tobias_Erlbacher>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FPRIME58259.2023.10161965>
foaf:homepage <https://doi.org/10.1109/PRIME58259.2023.10161965>
dc:identifier DBLP conf/prime/RinaldiLBRE23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FPRIME58259.2023.10161965 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gian_Domenico_Licciardo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Luigi_Di_Benedetto>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mathias_Rommel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nicola_J._Rinaldi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tobias_Erlbacher>
swrc:pages 233-236 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/prime/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/prime/RinaldiLBRE23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/prime/RinaldiLBRE23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/prime/prime2023.html#RinaldiLBRE23>
rdfs:seeAlso <https://doi.org/10.1109/PRIME58259.2023.10161965>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/prime>
dc:title A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document