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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/socc/MoradiWAMC08>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dag_T._Wisland>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Farshad_Moradi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hamid_Mahmoodi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Snorre_Aunet>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tuan_Vu_Cao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FSOCC.2008.4641491>
foaf:homepage <https://doi.org/10.1109/SOCC.2008.4641491>
dc:identifier DBLP conf/socc/MoradiWAMC08 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FSOCC.2008.4641491 (xsd:string)
dcterms:issued 2008 (xsd:gYear)
rdfs:label 65NM sub-threshold 11T-SRAM for ultra low voltage applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dag_T._Wisland>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Farshad_Moradi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hamid_Mahmoodi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Snorre_Aunet>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tuan_Vu_Cao>
swrc:pages 113-118 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/socc/2008>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/socc/MoradiWAMC08/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/socc/MoradiWAMC08>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/socc/socc2008.html#MoradiWAMC08>
rdfs:seeAlso <https://doi.org/10.1109/SOCC.2008.4641491>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/socc>
dc:title 65NM sub-threshold 11T-SRAM for ultra low voltage applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document