High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x‚ąľ 0.7, scaled EOT‚ąľ8.5√Ö and ‚ąľ10nm fin width.
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x‚ąľ 0.7, scaled EOT‚ąľ8.5√Ö and ‚ąľ10nm fin width.
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High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x‚ąľ 0.7, scaled EOT‚ąľ8.5√Ö and ‚ąľ10nm fin width.
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