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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsic/HsiehCCCC19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._C._Chuang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._W._Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/E._R._Hsieh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/H._W._Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Steve_S._Chung>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSIC.2019.8778094>
foaf:homepage <https://doi.org/10.23919/VLSIC.2019.8778094>
dc:identifier DBLP conf/vlsic/HsiehCCCC19 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSIC.2019.8778094 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._C._Chuang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._W._Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._R._Hsieh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/H._W._Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Steve_S._Chung>
swrc:pages 208- (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsic/2019>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsic/HsiehCCCC19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsic/HsiehCCCC19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsic/vlsic2019.html#HsiehCCCC19>
rdfs:seeAlso <https://doi.org/10.23919/VLSIC.2019.8778094>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsic>
dc:title The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document