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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsic/HsuTTHWWL12>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._H._Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Derek_Tao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Min-Jer_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ming-Chieh_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Peter_Kuoyuan_Hsu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Quincy_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yukit_Tang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSIC.2012.6243790>
foaf:homepage <https://doi.org/10.1109/VLSIC.2012.6243790>
dc:identifier DBLP conf/vlsic/HsuTTHWWL12 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSIC.2012.6243790 (xsd:string)
dcterms:issued 2012 (xsd:gYear)
rdfs:label A SRAM cell array with adaptive leakage reduction scheme for data retention in 28nm high-k metal-gate CMOS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._H._Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Derek_Tao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Min-Jer_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ming-Chieh_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Peter_Kuoyuan_Hsu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Quincy_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yukit_Tang>
swrc:pages 62-63 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsic/vlsic2012.html#HsuTTHWWL12>
rdfs:seeAlso <https://doi.org/10.1109/VLSIC.2012.6243790>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsic>
dc:title A SRAM cell array with adaptive leakage reduction scheme for data retention in 28nm high-k metal-gate CMOS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document