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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsic/KulkarniCSPBZ15>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Balaji_Srinivasan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Brian_Pedersen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kevin_Zhang_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sarvesh_H._Kulkarni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Uddalak_Bhattacharya>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhanping_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSIC.2015.7231372>
foaf:homepage <https://doi.org/10.1109/VLSIC.2015.7231372>
dc:identifier DBLP conf/vlsic/KulkarniCSPBZ15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSIC.2015.7231372 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Balaji_Srinivasan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Brian_Pedersen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kevin_Zhang_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sarvesh_H._Kulkarni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Uddalak_Bhattacharya>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhanping_Chen>
swrc:pages 174- (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/VLSIC.2015.7231372>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsic>
dc:title Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document