Enhanced Core Circuits for scaling DRAM: 0.7V VCC with Long Retention 138ms at 125¬įC and Random Row/Column Access Times Accelerated by 1.5ns.
(xsd:string)
Enhanced Core Circuits for scaling DRAM: 0.7V VCC with Long Retention 138ms at 125¬įC and Random Row/Column Access Times Accelerated by 1.5ns.
(xsd:string)