Analysis of temperature dependence of Si-Ge HBT.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/vlsid/KrishnaACB95
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1995
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Analysis of temperature dependence of Si-Ge HBT.
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semiconductor materials; heterojunction bipolar transistors; finite element analysis; semiconductor device models; Ge-Si alloys; simulation; thermal analysis; temperature dependence; FEM; heterojunction bipolar transistors; Ge mole-fraction; two dimensional device simulator; BISOF; finite element method; current gain; graded HBT; 200 to 300 K; SiGe
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Analysis of temperature dependence of Si-Ge HBT.
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