Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/vlsid/MadanBGS05
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Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs.
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Direct Tunneling, gate leakage current, high-K gate stack, MOSFETs
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Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs.
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