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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsid/PrasadGS01>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/B._Prasad>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chandra_Shekhar_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P._J._George>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICVD.2001.902706>
foaf:homepage <https://doi.org/10.1109/ICVD.2001.902706>
dc:identifier DBLP conf/vlsid/PrasadGS01 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICVD.2001.902706 (xsd:string)
dcterms:issued 2001 (xsd:gYear)
rdfs:label High Frequency Behaviour Of Electron Transport In Silicon And Its Implication For Drain Conductance Of Mos Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/B._Prasad>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chandra_Shekhar_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._J._George>
swrc:pages 491-494 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsid/2001>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsid/PrasadGS01/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsid/PrasadGS01>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsid/vlsid2001.html#PrasadGS01>
rdfs:seeAlso <https://doi.org/10.1109/ICVD.2001.902706>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsid>
dc:title High Frequency Behaviour Of Electron Transport In Silicon And Its Implication For Drain Conductance Of Mos Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document