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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsid/SharanM14>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Neha_Sharan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Santanu_Mahapatra>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSID.2014.76>
foaf:homepage <https://doi.org/10.1109/VLSID.2014.76>
dc:identifier DBLP conf/vlsid/SharanM14 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSID.2014.76 (xsd:string)
dcterms:issued 2014 (xsd:gYear)
rdfs:label Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Neha_Sharan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Santanu_Mahapatra>
swrc:pages 405-410 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsid/2014>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsid/SharanM14/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsid/SharanM14>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsid/vlsid2014.html#SharanM14>
rdfs:seeAlso <https://doi.org/10.1109/VLSID.2014.76>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsid>
dc:title Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document