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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/AoyagiYTIONNWHC23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hong-Chen_Cheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Isabel_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Koji_Nii>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Makoto_Yabuuchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takaaki_Nakazato>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tomotaka_Tanaka>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsung-Yung_Jonathan_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yoshiaki_Osada>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Hao_Hsu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuichiro_Ishii>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yumito_Aoyagi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185429>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185429>
dc:identifier DBLP conf/vlsit/AoyagiYTIONNWHC23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185429 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hong-Chen_Cheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hung-Jen_Liao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Isabel_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Koji_Nii>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Makoto_Yabuuchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takaaki_Nakazato>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tomotaka_Tanaka>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsung-Yung_Jonathan_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yoshiaki_Osada>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Hao_Hsu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuichiro_Ishii>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yumito_Aoyagi>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/AoyagiYTIONNWHC23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/AoyagiYTIONNWHC23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#AoyagiYTIONNWHC23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185429>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document