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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/BanLKH23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hyunsang_Hwang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jangseop_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sanghyun_Ban>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Taehoon_Kim>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185213>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185213>
dc:identifier DBLP conf/vlsit/BanLKH23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185213 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Simple Binary In-Te OTS with Sub-nm HfO‚āď Buffer Layer for 3D Vertical X-point Memory Applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hyunsang_Hwang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jangseop_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sanghyun_Ban>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Taehoon_Kim>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/BanLKH23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/BanLKH23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#BanLKH23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185213>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Simple Binary In-Te OTS with Sub-nm HfO‚āď Buffer Layer for 3D Vertical X-point Memory Applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document