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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/BelmonteKSCRDPS23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Adrian_Vaisman_Chasin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Attilio_Belmonte>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/F._Seidel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gouri_Sankar_Kar>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/H._Puliyalil>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Harold_Dekkers>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nouredine_Rassoul>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P._Carolan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Romain_Delhougne>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Kundu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Subhechha>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185398>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185398>
dc:identifier DBLP conf/vlsit/BelmonteKSCRDPS23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185398 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Lowest IOFF < 3√ó10-21 A/őľm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Adrian_Vaisman_Chasin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Attilio_Belmonte>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/F._Seidel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gouri_Sankar_Kar>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/H._Puliyalil>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Harold_Dekkers>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nouredine_Rassoul>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Carolan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Romain_Delhougne>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Kundu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Subhechha>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/BelmonteKSCRDPS23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/BelmonteKSCRDPS23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#BelmonteKSCRDPS23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185398>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Lowest IOFF < 3√ó10-21 A/őľm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document