[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/Chen0CL22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Anantha_P._Chandrakasan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hae-Seung_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hanrui_Wang_0002>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ruicong_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830365>
foaf:homepage <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830365>
dc:identifier DBLP conf/vlsit/Chen0CL22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830365 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Anantha_P._Chandrakasan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hae-Seung_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hanrui_Wang_0002>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ruicong_Chen>
swrc:pages 94-95 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2022>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/Chen0CL22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/Chen0CL22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#Chen0CL22>
rdfs:seeAlso <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830365>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document