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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/ChenLZHLTHWCXCC23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo-Wei_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chee_Wee_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chien-Te_Tu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dong_Soo_Woo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Guan-Hua_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hung-Chun_Chou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jer-Fu_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jia-Yang_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Min-Hung_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shee-Jier_Chueh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wan-Hsuan_Hsieh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yi-Chun_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yifan_Xing>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Rui_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zefu_Zhao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185284>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185284>
dc:identifier DBLP conf/vlsit/ChenLZHLTHWCXCC23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185284 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo-Wei_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chee_Wee_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chien-Te_Tu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dong_Soo_Woo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Guan-Hua_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hung-Chun_Chou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jer-Fu_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jia-Yang_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Min-Hung_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shee-Jier_Chueh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wan-Hsuan_Hsieh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yi-Chun_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yifan_Xing>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Rui_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zefu_Zhao>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/ChenLZHLTHWCXCC23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/ChenLZHLTHWCXCC23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#ChenLZHLTHWCXCC23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185284>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document