First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 őľA/őľm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 ¬įC.
First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 őľA/őľm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 ¬įC.
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First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 őľA/őľm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 ¬įC.
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