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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/HsiehTLWHLHC23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._R._Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/E._R._Hsieh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R._Q._Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._M._Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._L._Hsueh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._T._Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._T._Tang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._X._Huang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185226>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185226>
dc:identifier DBLP conf/vlsit/HsiehTLWHLHC23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185226 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label 3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¬Ļ¬Ļ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._R._Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._R._Hsieh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._Q._Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._M._Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._L._Hsueh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._T._Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._T._Tang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._X._Huang>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/HsiehTLWHLHC23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/HsiehTLWHLHC23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#HsiehTLWHLHC23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185226>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title 3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¬Ļ¬Ļ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document